transistors 1 publication date: november 2002 sjc00195bed 2SD0662, 2SD0662b (2sd662, 2sd662b) silicon npn epitaxial planar type for high breakdown voltage general amplification features ? high collector-emitter voltage (base open) v ceo ? high transition frequency f t ? m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c 6.9 0.1 2.5 0.1 (1.0) (1.0) (1.5) (0.85) 0.45 0.05 0.55 0.1 (2.5) (2.5) 21 3 r 0.7 r 0.9 (0.4) 3.5 0.1 4.5 0.1 4.1 0.2 2.4 0.2 1.25 0.05 2.0 0.2 1.0 0.1 (1.5) unit: mm 1: base 2: collector 3: emitter m-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank p q r h fe 30 to 100 60 to 150 100 to 220 parameter symbol rating unit collector-base voltage 2SD0662 v cbo 250 v (emitter open) 2SD0662b 400 collector-emitter voltage 2SD0662 v ceo 200 v (base open) 2SD0662b 400 emitter-base voltage (collector open) v ebo 5v collector current i c 70 ma collector power dissipation p c 600 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2SD0662 v ceo i c = 100 a, i b = 0 200 v (base open) 2SD0662b 400 emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-emitter cutoff current (base open) i ceo v ce = 100 v, i b = 02 a forward current transfer ratio h fe * v ce = 10 v, i c = 5 ma 30 220 ? collector-emitter saturation voltage v ce(sat) i c = 50 ma, i b = 5 ma 1.2 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 50 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 10 pf (common base, input open circuited) note) the part numbers in the parenthesis show conventional part number. www..net
2SD0662, 2SD0662b 2 sjc00195bed i c ? i b v ce(sat) ? i c i b ? v be p c ? t a i c ? v ce i c ? v be h fe ? i c f t ? i e i cbo ? t a 0 160 40 120 80 140 20 100 60 0 800 600 200 500 700 400 100 300 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 010 8 26 4 0 120 100 80 60 40 20 t a = 25 c i b = 2.0 ma 0.2 ma 0.4 ma 0.6 ma 1.8 ma 1.6 ma 1.4 ma 1.2 ma 1.0 ma 0.8 ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 25 c base current i b ( ma ) collector current i c ( ma ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1.0 0.8 0.2 0.6 0.4 0 3.0 2.5 2.0 1.5 1.0 0.5 v ce = 10 v t a = 25 c base-emitter voltage v be ( v ) base current i b ( ma ) 0.01 0.1 1 10 0 360 300 240 180 120 60 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 100 0 160 120 40 100 140 80 20 60 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 0200 160 40 120 80 1 10 10 2 10 3 10 4 v cb = 250 v ambient temperature t a ( c ) i cbo ( t a ) i cbo ( t a = 25 c ) www..net
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul www..net
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